Fabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering.

Metal halide perovskite semiconductors have attracted considerable attention because they enable the development of devices with exceptional optoelectronic and electronic properties via cost-effective and high-throughput chemical solution processes. However, challenges persist in the solution processing of perovskite films, including limited control over crystallization and the formation of defective deposits, leading to suboptimal device performance and reproducibility. Tin (Sn2+) halide perovskite holds promise for achieving high-performance thin-film transistors (TFTs) due to its intrinsic high hole mobility. Nevertheless, reliable production of high-quality Sn2+ perovskite films remains challenging due to the rapid crystallization compared with more extensively studied lead (Pb)-based materials. Recently, composition engineering has emerged as a mature and effective strategy for realizing the high-yield fabrication of Sn2+ halide perovskite thin films. This approach cannot only achieve improved TFT performance with high hole mobilities and current ratios1-6, but also enable reliable device operation with hysteresis-free character and long-term stability7-12. Here we provide the experimental procedure for precursor preparation, film and device fabrication and characterization. The entire process typically takes 20-24 h. This protocol requires a basic understanding of metal halide perovskites, perovskite film coating process, standard TFT fabrication and measurement techniques.