A comparative study of the hot electron energy loss rate in zinc- and cadmium compound quasi-two-dimensional materials.

In this paper, a comparative study of the electron energy loss rate (ELR) in zinc-based chalcogenide (ZnS, ZnSe, and ZnTe) and cadmium-based chalcogenide (CdS, CdSe, and CdTe) quantum wells owing to interaction with optical phonons in a quantising magnetic field is carried out by employing the electronic temperature model. The dependence of the electron ELR on the material slab thickness, quantizing magnetic field, surface electronic concentration, and electronic temperature in ZnS, ZnSe, and ZnTe as well as in CdS, CdSe, and CdTe materials is obtained and compared in detail. Our findings offer valuable information for the advancement of electronic devices.