Crystal Engineering of BiVO4 for Photochemical Sensing of H2 S Gas at Ultra-low Concentration.

We report a photochemical bismuth vanadate (BiVO4 ) sensing material, which possesses a large proportion of (110) and (011) facets combined with the additional (111) facets, for the selective detection of ultra-low concentration hydrogen sulfide (H2 S) driven by visible light. Specifically, the obtained octadecahedron BiVO4 (Octa-BiVO4 ) performs a high response value (67) and short response time (47.4 s) to 100 ppm H2 S with good stability for nearly 100 days, as well as undisturbedness by moist air. With the combination of experimental and theoretical calculation results, the adsorption and carrier transfer behaviors of H2 S molecules on the Octa-BiVO4 crystal surface are investigated. By adjusting the ratio of different crystal facets and controlling the facets with characteristic adsorption, we achieve improved anisotropic photoinduced carrier separation and high selectivity for a specific gas. Furthermore, this facial facet engineering can be extended to the synthesis of other sensing materials, offering huge opportunities for fundamental research and technological applications.