Theoretical Study of High-Performance Two-Dimensional WO2 MOSFETs with Excellent n/p Symmetry.

As transistor dimensions are scaled down to the sub-10 nm regime, two-dimensional (2D) layered materials have attracted extensive attention for suppressing short-channel effects. Nevertheless, the development of p-type 2D transistors lags far behind that of n-type devices, hindering 2D CMOS technology advancement. Herein, the electronic properties of 2D WO2 and the quantum transport characteristics of dual-gate WO2 MOSFETs are systematically investigated using density functional theory combined with the nonequilibrium Green's function. At 10 nm channel length, the n-type and p-type devices exhibit high on-state current (Ion) of 1615 μA/μm and 1759 μA/μm, respectively, which satisfy the ITRS high-performance requirements with excellent n/p symmetry. It is also found that the large bandwidth of the isolated valence band impedes ultrasteep subthreshold swing. Moreover, WO2 MOSFETs exhibit small delay time (τ) and low power delay product (PDP), providing a theoretical basis for material selection and device design of high-performance sub-10 nm 2D transistors.