The preparation of fluorine doped cadmium oxide thin film by sol-gel process.

During the several decades, CdO thin film has attracted many attentions as a candidate for the transparent conducting electrodes due to its high electrical conductivity and high optical transmittance. Various dopants such as F, In, Al, Sn, and Cr have been used to improve the optical and electrical properties of the film. Generally, the optical and electrical property of the thin film is dependent on its oxidation state, the amount of dopant materials, and the fabrication process. In this study, fluorine doped CdO thin films were prepared by using sol-gel process with various atomic ratios of Cd:F, and their electrical and optical properties were investigated. The precursor solution for sol-gel film was prepared with pH 5 and pH 8, and the film was annealed at 350 degrees C. X-ray diffraction pattern confirmed the cubic CdO:F phase formation, and the 10% fluorine doped film prepared with pH 8 precursor solution showed the lowest resistivity of 0.01574 Ω cm.