The relationship between photoluminescence (PL) decay and crystal growth kinetics in thioglycolic acid (TGA) capped CdTe quantum dots (QDs).

The PL lifetime optimization of CdTe QDs capped with TGA has yet to be understood from a perspective of growth kinetics. In this work, the growth kinetics and PL properties of CdTe QDs growing in aqueous solutions of two TGA concentrations, 0 mM and 57 mM, were systematically investigated using UV, TEM, and PL methods. CdTe QDs in 0 mM TGA solution were found to follow the mixed OA (Oriented Attachment)-OR (Ostwald Ripening) growth kinetics. The PL peaks experienced a red-shift with almost unchanged intensity and the PL lifetimes increased gradually. In 57 mM TGA solution, the QDs followed the OA dominated growth mechanism. The PL peak broadened greatly with a red-shift and its intensity decreased significantly. The PL lifetime increased much higher than that in 0 mM TGA solution. Based on the different growth kinetic models of the two systems, we suggest that in the low (0 mM) TGA solution, the increased surface defects induced by TGA desorption and the existence of partial internal defects caused by OA growth were the main reasons for the gradual increase of PL lifetime, while in high (57 mM) TGA solution, the increase of PL lifetime was ascribed to the abundant internal defects produced by OA collision. Finally, kinetic data showed the effect of the TGA concentration on crystal growth and PL lifetime of CdTe QDs. The results might provide guidance for understanding the mechanism behind the phenomena of ligand-related PL properties.