Large perpendicular magnetic anisotropy of transition metal dimers driven by polarization switching of a two-dimensional ferroelectric In2Se3 substrate.

Large perpendicular magnetic anisotropy (MA) is highly desirable for realizing atomic-scale magnetic data storage which represents the ultimate limit of the density of magnetic recording. In this work, we study the MA of transition metal dimers Co-Os, Co-Co and Os-Os adsorbed on two-dimensional ferroelectric In2Se3 (In2Se3-CoOs, In2Se3-OsCo, In2Se3-CoCo and In2Se3-OsOs) using first-principles calculations. We find that the Co-Os dimer in In2Se3-CoOs has a total magnetic anisotropy energy (MAE) of ∼40 meV. The MAE arising from the Os atom in In2Se3-CoOs is up to ∼60 meV. Such large MAE is attributed to the high spin-orbit coupling constant and the onefold coordination of the Os atom. In addition, perpendicular MA can be enhanced in In2Se3-CoOs and induced in In2Se3-OsCo, In2Se3-CoCo and In2Se3-OsOs by the ferroelectric polarization reversal of In2Se3. We demonstrate that the enlargement of exchange splitting of dxy/dx2-y2 and dxz/dyz orbitals for Os atoms in In2Se3-OsOs, Co atom in In2Se3-CoOs and Os and Co atoms in In2Se3-OsCo is responsible for the increase of MAE; while, for the upper Co atom in In2Se3-CoCo and the Os atom in In2Se3-CoOs, the energy rise of the dz2 orbital owing to the change of the crystal field effect by the reversal of ferroelectric polarization results in the increase of MAE.