Characterization of Cu-Sn/Pb diffusion zones of microelectronic contacts by means of electron probe microanalysis and ion beam sputtering.

Physical parameters of material, such as strength and electrical conductivity, can be influenced considerably by the intermetallic compounds formed by diffusion in soldered microelectronic contacts between Cu and Sn/ Pb solders. Therefore, formation and growth of these contact zones were systematically investigated on model specimens in dependence on temperature, time and chemical tin-lead concentration of the solders by means of electron probe microanalytical investigations and characterized by phase growth constants. Compared with the conventional metallographic specimen preparation method, the ion beam etching of the contact surfaces proves to be an excellently suitable means for representing the microstructure after the cooling of the samples. Moreover, the three-dimensional grain structure and technologically caused defects in the contact can be shown by ion beam slope cutting. Effects as e.g. the dendritic growth and Kirkendall pores which increasingly occur at higher temperatures are successfully proved.