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Nano letters · 2025

High Pressure Resistance in Omniphobic Distillation Membranes with Re-entrant Nanostructures.

СтатьяНазвание и аннотация: Перевод в очереди
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Lee Sangsuk, Laris Omar A, Hjelvik Elizabeth A, Hoek Eric M V, Straub Anthony P

Аннотация

We developed pressure-resistant omniphobic membranes that enable stable distillation of low-surface-tension liquids at applied pressures exceeding 15 bar. Membranes were synthesized by grafting re-entrant nanostructures onto porous alumina membranes, followed by hydrophobic modification. The membranes exhibited a high liquid entry pressure of 36.2 bar with water and withstood an applied pressure up to 15.5 bar with a low-surface-tension 15 wt % ethanol-water mixture. Simulations revealed that the enhanced wetting resistance is due to the presence of re-entrant structures, which facilitated a 220% increase in wetting pressure for the low-surface-tension liquid compared to a control membrane with cylindrical pores. We further demonstrated stable pressure-driven distillation of low-surface-tension liquids, achieving higher than 97% salt rejection. This work is the first demonstration of distillation membranes operating with low-surface-tension liquids under high applied pressures and provides critical validation of wettability theory under extreme pressures.

ИП Урсолов Владлен Сергеевич

ИНН 500118482352 · ОГРНИП 314500117700049

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