External-field and pressure-controlled magneto-optical response in alloy-composition engineered GaAs/Al λ Ga1-λ As nanomaterials with asymmetrical Gaussian confinement.

Hydrostatic-pressure, external electric-field, and aluminium-composition-controlled magneto-optical response in the GaAs/Al λ Ga1-λ As nanostructure with asymmetrical Gaussian confinement, is investigated applying the projection-operator framework. The magneto-optical response is systematically probed via the optically detected magneto-phonon resonance (ODMPR) effect, including strength, shift, and full width at half maximum (FWHM) of the ODMPR peak induced by intersubband and intrasubband transitions for absorption and emission processes of LO-phonons. The results show that: (i) the magneto-optical response probed via the ODMPR effect can be effectively controlled through both external and structural parameters; (ii) the magneto-optical response induced by both the intrasubband and intersubband transitions is very sensitive to the hydrostatic pressure and aluminium composition, while only the intersubband transition is sensitive to the external electric field; (iii) among the intersubband transitions due to phonon absorption and emission, and intrasubband transitions due to phonon emission, the FWHM of GaAs/Al λ Ga1-λ As asymmetrical Gaussian potential heterostructures resulting from intersubband transitions with phonon absorption are the largest and the most sensitive to variations in hydrostatic-pressure, quantum system temperature, and aluminium-composition λ, followed by the intrasubband transition due to phonon emission, while the intersubband transition due to phonon emission is the smallest and the least sensitive; (iv) and the sensitivity of the magneto-optical response to external electric field, confinement potential depth and width of the GaAs/Al λ Ga1-λ As nanostructure under the influence of aluminium composition and hydrostatic pressure, is also shown in detail. Comprehensive characteristics of the magneto-optical response of the GaAs/Al λ Ga1-λ As nanostructure are provided in the Conclusions, which are useful for the application potential of optoelectronic devices.