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Materials (Basel, Switzerland) · 2026

Stable Low-Voltage Organic Memristors Enabled by Templated Crystallization and Quantum-Dot-Regulated Filament Formation.

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Lei Qi, Tu Yonghua, Yan Zilong, Wei Junqing, Han Boning, Zhang Haiwei, Xie Yangyang, Zhang Kailiang

Аннотация

Organic memristors are attractive building blocks for neuromorphic computing owing to their intrinsic synaptic functionalities and solution-processability. However, their operational instability remains a major challenge, primarily arising from poorly controlled semiconductor crystallization and stochastic conductive filament formation. Here, we report a high-performance solution-processed organic memristor based on a TIPS-pentacene/PMMA/CdSe-ZnS quantum-dot hybrid system, in which a dual-engineering strategy is employed to simultaneously regulate film crystallization and filament dynamics. Specifically, the PMMA matrix templates the molecular ordering of TIPS-pentacene to improve film uniformity and crystallinity, while CdSe/ZnS quantum dots locally modulate the electric field to direct and confine conductive filament formation. As a result, the device exhibits ultralow and highly uniform switching voltages (0.473 V for set and -0.430 V for reset), suppressed device-to-device variation, long retention exceeding 104 s, and endurance over 1200 switching cycles. In addition, the memristor supports multilevel data storage and successfully emulates key synaptic functions, including long-term potentiation/depression, paired-pulse facilitation, and spike-timing-dependent plasticity. This work provides a materials-level strategy for achieving reliable and low-power organic memristors, offering a viable route toward high-density nonvolatile memory and neuromorphic computing hardware.

ИП Урсолов Владлен Сергеевич

ИНН 500118482352 · ОГРНИП 314500117700049

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