Vertically integrated gate-all-around nano-LED with enhanced radiative efficiency.

The continued drive toward device miniaturization and monolithic integration has created an urgent need for nanoscale light sources with high efficiency and controllable carrier dynamics. Here, we report a gate-all-around (GAA) nanoscale light-emitting diode (nano-LED), in which a conformal gate electrode surrounds both the n-GaN region and the InGaN/GaN multiple-quantum-wells (MQWs) active region. By simply electrically modulating the surface potential, the GAA structure suppresses surface carrier recombination and confines radiative recombination to the undamaged central bulk region, overcoming a primary efficiency bottleneck in submicron III-nitride emitters. Moreover, the proposed GAA nano-LED exhibits transistor-like current modulation, with positive gate bias enhancing carrier injection and negative bias suppressing it, enabling full on-off switching of electroluminescence. Importantly, negative gate bias reduces surface recombination and non-radiative leakage, resulting in a nearly fourfold enhancement of peak quantum yield. Hence, this work demonstrates, for the first time to the best of our knowledge, a vertically integrated GAA field effect transistor-LED platform at the nanoscale and establishes a promising route for achieving high-efficiency nanowire LEDs and large-scale three-dimensional optoelectronic integration.