High-bandwidth 1060nm VCSEL design with hybrid buried tunnel junction and oxide confinement.

1060 nm vertical-cavity surface-emitting lasers (VCSELs) offer low dispersion and transmission loss for optical interconnects, but conventional oxide-confined designs face challenges in thermal accumulation and parasitic effects. We propose a high-speed 1060 nm VCSEL featuring a hybrid confinement structure that integrates a buried tunnel junction (BTJ) with an oxide aperture, along with an optimized 8 nm BTJ position offset. This hybrid architecture enhances current injection, reduces parasitic capacitance, and improves thermal management. The device achieves a -3 dB modulation bandwidth of 37.2 GHz, low differential resistance (~65 Ω), >50 dB side-mode suppression ratio, and a >10 K reduction in peak temperature via numerical modeling. These results demonstrate a promising approach for next-generation, energy-efficient VCSELs targeting high-speed, short-reach optical communication systems.