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ACS applied materials & interfaces · 2026

Tunable Redox Dynamics of Organic Electrochemical Transistors for High-Performance Parallel Reservoir Computing.

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Yang Yuhong, Gao Lin, Peng Yujie, Liu Changjian, Xie Zhuoxiao, Xu Canghao, Guo Haihong, Liu Haozhe, Zheng Ding, Yu Junsheng

Аннотация

Organic electrochemical transistor (OECT) performance is determined by the channel material's ability to transport both ions and electrons. However, many high-mobility organic semiconductors are hydrophobic and ion-impermeable, which limits their electrochemical activity. Consequently, achieving controllable redox modulation requires complex molecular design and multistep synthesis, thereby impeding their use in diverse applications. Herein, we establish a facile semiconductor blending strategy that enables hierarchical redox control in OECTs, advancing them toward high-performance parallel reservoir computing (RC). By integrating a hydrophilic organic mixed ionic-electronic conductor (OMIEC) into a hydrophobic semiconductor, the resulting phase-separated microstructure preserves ordered molecular packing for charge transport while governing composition-dependent ion accessibility. This allows on-demand electrochemical doping kinetics to optimize transfer characteristics, overcome the electrochemical inactivity issue of pristine PBTTT-C14, and achieve high current, large on/off ratio (∼2.3 × 104) along with improved cycling stability. More importantly, blended OECTs serve as multitime scale synaptic nodes, and by leveraging these distinct relaxation dynamics, we construct a parallel reservoir via multitime scale fusion, boosting Fashion-MNIST data set accuracy by over 10% compared to a single OECT. This work pioneers a materials-centric paradigm for engineering emergent ion-electron functionalities via programmable microstructures, thereby laying the material foundation for next-generation neuromorphic hardware capable of integrated sensing, memory, and parallel computation.

ИП Урсолов Владлен Сергеевич

ИНН 500118482352 · ОГРНИП 314500117700049

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