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DOI 10.1021/acsnano.6c03869

Медицинская библиотека · ACS nano · 2026

All-Electric Low-Power Switching of Perpendicular Magnetization by Low-Crystal-Symmetry Weyl Semimetal NbIrTe4.

Lai Jia-Min, Hou Rui, Yan Zhi, Jin Mingfen, Wang Fei, Guo Junnan, Zhang Yajing, Guo Kaiwei, Zhao Pengnan, Bian Bingyue, Du Yaohui, Lu Wentian, Wang Hongru, Yu Zhonghai, Shi Guoyi, Liu Liang, Yu Guoqiang, Zhang Lishu, Zhang Delin, Jiang Yong, Xu Xiaohong

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Аннотация

The development of energy-efficient spin-orbit torque devices hinges on realizing field-free switching of perpendicular magnetization with minimal power consumption. Here, we demonstrate robust field-free switching of perpendicular magnetization at room temperature, enabled by out-of-plane spins generated in the Weyl semimetal NbIrTe4. The critical switching current density is 3.6 × 106 A/cm2, corresponding to the lowest power consumption reported among intrinsic low-crystal-symmetry materials, 16 times lower than that of WTe2 and 4 times lower than that of TaIrTe4. The switching polarity remains stable up to an in-plane magnetic field of 19 mT, confirming the robustness of the field-free operation against magnetic perturbations. Loop-shift measurements and first-principles calculations consistently reveal a large out-of-plane spin Hall conductivity in NbIrTe4, σs,z ≈ 2.61 × 104 (ℏ/2e)(Ω·m)-1, responsible for the highly efficient and stable magnetization switching. These findings position NbIrTe4 as a compelling member of the emerging class of low-symmetry materials and offer a promising pathway toward the development of energy-efficient, all-electric spin-orbit torque devices.

Для цитирования: Lai Jia-Min, Hou Rui, Yan Zhi, Jin Mingfen, Wang Fei, Guo Junnan, Zhang Yajing, Guo Kaiwei, Zhao Pengnan, Bian Bingyue, Du Yaohui, Lu Wentian, Wang Hongru, Yu Zhonghai, Shi Guoyi, Liu Liang, Yu Guoqiang, Zhang Lishu, Zhang Delin, Jiang Yong, Xu Xiaohong. All-Electric Low-Power Switching of Perpendicular Magnetization by Low-Crystal-Symmetry Weyl Semimetal NbIrTe4.. ACS nano. 2026. DOI: 10.1021/acsnano.6c03869.
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