Te/Fe3GaTe2 1D-2D Ferroelectric Heterojunction Transistors Enabling Ultrafast Multi-State Switching for Workpiece Surface Defect Inspection.

Ferroelectric field-effect transistors, which rely on ferroelectric polarization reversal to modulate the channel resistance, hold great promise for nonvolatile memory and neuromorphic computing. The polarization switching dynamics are critical for achieving high-speed, high-bit-density neuromorphic hardware. Here, we report a 1D-2D asymmetric heterojunction composed of a single-element tellurium (Te) nanowire and a magnetic metal, Fe3GaTe2. Piezoresponse force microscopy reveals reversible polarization switching at room temperature. Utilizing this ferroelectric heterojunction, we construct ferroelectric semiconductor field-effect transistors that exhibit tunable resistance states exceeding 7 bits, featuring an on/off ratio of 103, a retention time exceeding 103 s, and ultrafast switching down to 20 ns. Moreover, the transistor enables accurate recognition of six kinds of micro-defects with an accuracy of 97.1% on the workpiece surface by convolutional neural network. This work establishes the intrinsic relationship between ferroelectric polarization and resistance modulation, providing a device platform for next-generation multilevel storage and ultrafast neuromorphic computing networks.