Efficient Red/Green Inverted Quantum-Dot Light-Emitting Diodes Enabled by Bilateral Heterojunction Charge-Generation Layers.

The advancement of inverted quantum-dot light-emitting diodes (QLEDs) is fundamentally hindered by inefficient charge injection and severe interfacial energy barriers. Here, we propose a bilateral charge-generation layer (CGL) architecture integrating two complementary heterojunctions: PEDOT:PSS/ZnO and N,N-bis(4-methylphenyl) benzenamine (TAPC)/1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN). This architecture decouples the carrier supply from electrodes, enabling balanced carrier injection into the quantum-dot emissive layer. The resulting inverted QLEDs achieve a record-high external quantum efficiency (EQE) of 30.8% for red emission and a high EQE of 20.1% for green emission, corresponding to current efficiencies of 40.8 and 88.1 cd A-1, respectively. These bilateral CGL devices also exhibit extended stability, with extrapolated T50 lifetimes of ∼36,494 h (red) and ∼39,962 h (green) at 100 cd m-2. Both the efficiencies and lifetimes significantly outperform their unilateral counterparts. This work establishes a practical design pathway for efficient and stable inverted QLEDs, providing useful insights for advancing emerging optoelectronic technologies.