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Advanced materials (Deerfield Beach, Fla.) · 2026

Parity-Anomaly Quantum Anomalous Hall State in Mechanically Assembled Topological Insulator/Magnet Heterostructures.

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Jain Rakshit, Roddy Matthew, Gupta Vishakha, Huang Benjamin, Sayeed Hasan M, Alnaser Husain F, Vashist Amit, Watanabe Kenji, Taniguchi Takashi, Deshpande Vikram V, Sparks Taylor D, Ralph Daniel C

Аннотация

The family of quantized anomalous Hall effects provides remarkable electronic properties-for example, current flow perpendicular to the voltage and, in some cases, dissipationless edge states even with zero applied magnetic field, B-but their development is limited by their realization only at very low temperatures. The state of the art in magnetically-doped topological insulators (TIs) currently allows quantized Hall conductivities to persist up to temperatures of several Kelvin. An alternative approach, proximity-coupled TI/magnet heterostructures made using a chemically separate magnet, has up until now been more limited, with Hall quantization either completely absent or present only below 100 mK at B = 0. Here, we demonstrate one in the family of quantized anomalous Hall effects, the parity anomaly state (with Hall conductivity e2/2h) at temperatures up to 10 K in TI/magnet bilayers made by mechanical assembly of van der Waals layers. This represents an enhancement by a factor of 100 compared to previous proximity-coupled heterostructures grown by deposition.

ИП Урсолов Владлен Сергеевич

ИНН 500118482352 · ОГРНИП 314500117700049

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