Nature communications · 2026
Large-area two-dimensional MoO3 as a high-κ dielectric for van der Waals integration.
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Hu Zhenliang, Zhao Bei, Fu Qiang, Guan Huiyan, Liu Xiaozhi, Yang Tong, Feng Zijie, Liu Xiaoya, Xia Weiqiao, Sun Xudong, Zhang Zucheng, Wang Yang, Chen Yinzhu, Yang Yutian, Feng Shaopeng, Tang Xiao, Zhang Yong, Chen Jiahao, Zhang Xinlei, Li Taotao, Li Zejun, Liu Yanpeng, Yang Ming, Luo Yue, Wu Jing, Liu Hongwei, Ni Zhenhua, Liu Yuan, Lu Junpeng
Аннотация
Large-area high-quality dielectrics are essential for the integration of two-dimensional (2D) transistors. However, this integration remains challenging, especially for conventional dielectrics that require deposition processes. Adopting van der Waals (vdW) dielectrics is attractive. Molybdenum trioxide (α-MoO3) has been demonstrated as a vdW dielectric in 2D field-effect transistors (FETs), but previous demonstrations showed limited performance and small size. Here, we grow large-area single-crystalline MoO3 with uniform thickness and explore its properties as a dielectric. Single-crystalline MoO3 reaches the millimeter scale and maintains a high dielectric constant of ~ 18.5, low gate leakage of approximately 10-2 A cm-2 at 3.0 MV cm-1, and a large breakdown field of ~ 26.75 MV cm-1. Top-gated molybdenum disulfide (MoS2) transistors exhibit an average subthreshold swing of ~ 71 mV dec-1, and an on/off current ratio exceeding 108. Furthermore, we demonstrate MoO3-based integrated circuits and low-power complementary metal-oxide-semiconductor (CMOS) inverters.