Higashi Nihon shigaku zasshi · 1989
[The effectiveness of GaA1As semiconductor laser treatment to pain decrease after irradiation].
Аннотация на английскомСтатьяНазвание и аннотация: Перевод пока не подготовлен
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Kawakami T, Ibaraki Y, Haraguchi K, Odachi H, Kawamura H, Kubota M, Miyata T, Watanabe T, Iioka A, Nittono M
Аннотация
Recently, sedative and antiphlogistic treatment is conducted with low energy laser irradiation. The purpose of the this study was to evaluate the effectiveness to decrease of pain just after irradiation by a GaA1As semiconductor laser. The irradiation apparatus was SEMI LASER NANOX (LX-800: G-C. Co.) with the following features: a wave length of (around) 780nm: the laser energy, 30mW; exposure time, 30sec to 180sec/per treatment. Diagnosis of pre- and post-operative sensitivity were classified into the following four grades: Grade 0 no pain. Grade I mild pain. Grade II strong but tolerable pain. Grade III intolerable pain (simultaneous with stimulation). The results were as follows: 1. In the hypersensitivity of dentin, the treatment was not effective with 2 cases of grade III, but with all of grade I, II (35 cases) the pain decreased just after irradiation. 2. It was effective in all cases with pain like periodontitis after root canal filling and pain after extraction of teeth. 3. It was effective in all cases with gingivitis, stomatitis, and gingival ulcers after infiltration anesthesia etc..