A Reconfigurable and Nonvolatile Optoelectronic Memtransistor with Ultralong Retention Time Based on In2Se3/Te van der Waals Heterostructure.

Memtransistors with reconfigurable and nonvolatile properties can simulate a visual neural synapse and demonstrate great potential in overcoming challenges posed by the conventional von Neumann architecture. Here, we fabricated an indium selenide (In2Se3)/tellurene (Te) van der Waals p-n junction memtransistor that can exhibit significant artificial synaptic properties through electric and optoelectronic dual stimuli to modulate different synaptic weights. Such a device exhibits nonvolatile retention with an ultralong holding time exceeding 105 s after light removal. Benefiting from its dual modulation modes, three types of basic logic operations, and the typical Pavlov's dog experiment can be implemented, demonstrating the device's wide-ranging application potential. Furthermore, the Modified National Institute of Standards and Technology image recognition was performed via an artificial neural network, achieving 90.15% accuracy and maintaining an accuracy of 70.38% under multilevel noise. These results indicate that In2Se3/Te memtransistors are promising for developing brain-inspired and neuromorphic computing systems.