Energy efficient spintronic devices based on 2D electron and hole gases arising at oxide/oxide interfaces.

This perspective article explores the potential of two-dimensional electron and hole gases at oxide/oxide interfaces as promising conduction channels in energy-efficient spintronic devices for memory and logic applications. Magneto-electric and ferro-electric device architectures are considered, highlighting their advantages in integrating non-volatility with ultra-fast switching capabilities. We emphasize the significance of spin-orbit coupling in generating robust spin currents and examine how the Rashba and inverse Edelstein effects can be harnessed in device operations. Specific heterostructures, including HfO2/SrTiO3, Cr2O3/TiO2-x, and ZrO2-x-based systems, are reviewed in terms of their material properties, interface stability, and suitability for practical implementation.