Spin-orbit-torque based on Mn-based noncollinear antiferromagnets.

In recent years, the rapid increase in data volume has driven higher demands for both the storage speed and density of spintronic devices. Non-collinear antiferromagnets have emerged as a major research focus in spintronics because of their unique properties, including negligible stray magnetic fields, picosecond-level dynamic responses, and unconventional spin polarization. This article reviews the research on utilizing Mn-based non-collinear antiferromagnets as spin source layers and magnetic layers in spintronic devices. The first section introduces the crystal and magnetic structures of Mn-based non-collinear antiferromagnets. The second section introduces the charge and spin transport permitted by symmetry in these materials. The third section introduces the implementation of all-electrical spin-orbit torque (SOT) driven perpendicular magnetization switching and control of spin-polarized currents in theZdirection when Mn-based non-collinear antiferromagnets are employed as spin source layers. The fourth section introduces the deterministic magnetization switching of antiferromagnetic order and the potential for self-induced magnetization switching when these materials are used as magnetic layers. Finally, we summarize the research on SOT switching based on Mn-based non-collinear antiferromagnets and look forward to future research directions.