Nature materials · 2025
All-electrical perpendicular switching of chiral antiferromagnetic order.
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Zheng Zhenyi, Jia Lanxin, Zhang Zhizhong, Shen Qia, Zhou Guowei, Cui Zhiwei, Ren Lizhu, Chen Zhiteng, Jamaludin Nur Fadilah, Zhao Tieyang, Xiao Rui, Zhang Qihan, Du Yi, Liu Liang, Gradečak Silvija, Novoselov Kostya S, Zhao Weisheng, Xu Xiaohong, Zhang Yue, Chen Jingsheng
Аннотация
Antiferromagnets as active components in devices have been attracting attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and fast memory devices. Although the switching of antiferromagnetic (AFM) order by current-induced spin-orbit torque (SOT) has already been realized, field-free SOT-induced bidirectional switching of AFM order in perpendicular geometry has been elusive. Here we experimentally demonstrate field-free perpendicular switching of the magnetic octupole moct in chiral AFM Mn3Sn by combining in-plane and out-of-plane SOTs generated by two-dimensional van der Vaals WTe2. The out-of-plane SOT breaks the in-plane inversion symmetry and leads to deterministic bidirectional switching of moct in polycrystalline Mn3Sn even without a fixed perpendicular moct easy axis. The switching ratio reaches up to 80% compared to 20-30% in polycrystalline Mn3Sn and the critical current density is reduced by an order of magnitude to around 1 MA cm-2. Our work promotes the development of chiral AFM devices toward practical application.