Highly Efficient Room-Temperature Nonvolatile Magnetization Switching in 2D Van Der Waals Ferromagnet Fe3GaTe2.

The ability to manipulate magnetic states through low currents is crucial for next-generation spintronics. Two-dimensional (2D) magnetic van der Waals (vdW) materials have attracted widespread attention due to their huge spin-orbit torque (SOT) effects. However, the relatively low Curie temperature (TC) of most known 2D ferromagnets limits their applications above room temperature. Therefore, the effective manipulation of the magnetic state at room temperature and the integration of multiple storage units remain a challenge. Here, we investigate the fundamental magnetism and nonlocal manipulation phenomena of the room-temperature vdW material Fe3GaTe2 (FGaT) using magneto-optical Kerr effect measurement technology, leading to the successful construction of low-power room-temperature nonvolatile magnetic switches and efficient room-temperature magneto-optical memory devices (MOMD). Notably, the power consumption of the room-temperature magnetization switch and the current density of the MOMD are as low as 5.12 × 1011 W/m3 and 5 × 104 A/cm2, respectively. These findings provide solutions for the control and integration of next-generation vdW high-performance spintronic devices.