Controlling Magnetization in Ferromagnetic Semiconductors by Current-Induced Spin-Orbit Torque.

In this paper, we review our work on the manipulation of magnetization in ferromagnetic semiconductors (FMSs) using electric-current-induced spin-orbit torque (SOT). Our review focuses on FMS layers from the (Ga,Mn)As zinc-blende family grown by molecular beam epitaxy. We describe the processes used to obtain spin polarization of the current that is required to achieve SOT, and we briefly discuss methods of specimen preparation and of measuring the state of magnetization. Using specific examples, we then discuss experiments for switching the magnetization in FMS layers with either out-of-plane or in-plane easy axes. We compare the efficiency of SOT manipulation in single-layer FMS structures to that observed in heavy-metal/ferromagnet bilayers that are commonly used in magnetization switching by SOT. We then provide examples of prototype devices made possible by manipulation of magnetization by SOT in FMSs, such as read-write devices. Finally, based on our experimental results, we discuss future directions which need to be explored to achieve practical magnetic memories and related applications based on SOT switching.