High speed slow-light Michelson interferometer modulators with dual-inductor peaking enhancement.

We present a novel, to our knowledge, electro-optic (EO) modulator, integrating slow-light Bragg waveguides with a Michelson interferometer (MI) on a silicon-on-insulator (SOI) platform. By leveraging the slow-light effect, the design enhances the modulation efficiency while reducing the device footprint. Additionally, dual-inductor peaking is employed to improve the bandwidth, with the two circular inductors providing flexibility to adjust their parameters for optimal peaking bandwidth. Experimental results show that the device achieves an electro-optic 3-dB bandwidth of 48 GHz under a 2 V reverse-bias condition in small-signal measurement and a modulation efficiency of 0.26 V·cm. High-speed tests show that the device supports a 100 Gbit/s on-off keying (OOK) eye diagram rate. The device holds significant application prospects in optical interconnection applications.