Preparation of type-Ⅱ heterojunction of Ta3N5/CdS for enhanced photocathodic protection.
Аннотация
Constructing type-II heterojunctions is an effective way to enhance the photoelectrochemical (PEC) performance of semiconductor-based materials. In this study, in order to increase the specific surface area, a novel coral-like 3D porous Ta3N5nanostructure was first synthesized via a hydrothermal method. Subsequently, CdS quantum dots were deposited on the coral-like Ta3N5substrate by a successive ionic layer adsorption and reaction method with 40, 80, and 120 cycles (named Ta3N5/CdS-40, Ta3N5/CdS-80, and Ta3N5/CdS-120) to modulate the band structures and optical absorption properties of the composites. The results show that Ta3N5/CdS-80 exhibits a continuous and dense CdS overlayer with effectively passivated surface states, delivering the optimal PEC performance (3625μA·cm-2at +1 V about 39 times that of the pure Ta3N5). This is because the Type-II heterojunction between CdS and Ta3N5facilitates the separation of photogenerated carriers, and the high-quality CdS coating reduces the capture of photogenerated carriers by defects. When coupled with 304 stainless steel, Ta3N5/CdS-80 yields a photovoltage drop of 0.39 V and a net photocurrent density of 99.39μA·cm-2, significantly outperforming the Ta3N5/CdS-40 and Ta3N5/CdS-120 samples. This work provides experimental evidence for the development of superior Ta3N5-based photogenerated cathodic protection materials.
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