Photogenerated Charge Injection-Modulated Ultralow-Power ZnO/Sb2S3 Heterojunction Memristors for Artificial Visual Nociception and Persistence Systems.

Bioinspired neuromorphic architectures featuring sensory-memory-computing integration offer a highly effective approach to overcoming the traditional von Neumann computing bottleneck. However, existing optoelectronic memristors universally face challenges such as high static power consumption and difficulties in modulating resistive switching behaviors during array-level integration. Here, an ultralow-power Ag/PMMA/ZnO/Sb2S3/FTO heterojunction memristor operating at the nanoampere scale is reported. By engineering a Type-II ZnO/Sb2S3 band alignment and incorporating an ultrathin PMMA tunneling barrier, the device achieves synergistic carrier regulation and broadband charge separation. Notably, light illumination significantly reduces the SET voltage from 5.0 to 2.65 V. A collaborative switching model, governed by photocarrier injection and electric-field-driven dynamics, is proposed to elucidate the mechanism of threshold modulation at the interface. Functionally, the device emulates essential synaptic plasticity and realizes an advanced artificial visual nociceptor featuring threshold-triggering, nonadaptation, and relaxation. Furthermore, simulation-based spatiotemporal image processing, including dynamic forgetting and visual persistence, is demonstrated. This work establishes a new mechanistic paradigm for ultralow-power, multimodal neuromorphic vision hardware, paving the way for next-generation energy-efficient bioinspired perception systems.