Fabrication of one-dimensional Zn-doped Bi2S3 nanorods for photodiode applications.

In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi2S3 nanorods as self-powered and photodiode applications was investigated. The performance of P-N junction photodiodes has been for decades since they are crucial in energy applications. The structure, degree of crystallinity, and shape of Zn-doped Bi2S3 nanorods of various doping percentages formed onto the indium tin oxide (ITO) substrates by the dip coating technique are investigated using X-ray powder diffraction (XRD) and SEM. With increasing illumination time, the current-voltage (I-V) graphs demonstrate a rise in photocurrent. The diode's idealist factor was estimated using the I-V technique under 30 min of light illumination.