Electroviscous resistance of nanofluidic bends.

Analysis tools that quantify the pressure and potential changes occurring over pressure-driven electrokinetic device elements are necessary for the design of optimal laboratory-on-a-chip devices. In this study, the resistance of a nanofluidic silica channel with negatively charged walls containing a 90^{∘} bend to the electroviscous flow of a potassium chloride salt solution is quantified in terms of two equivalent lengths using numerical analysis. One equivalent length is based on the excess pressure drop and the other on the excess potential rise. Over the entire range of simulations conducted, these equivalent lengths are relatively independent of salt concentration, flow velocity, channel size, and surface charge, remaining within the approximate ranges of 1.3-1.5 for the pressure equivalent length and 0.8-1.05 for the potential equivalent length.