Nanocrystalline sensor-grade Sn1-xInxO2 (0 < or = x < or = 0.2).

Nanocrystalline Sn1-xInxO2 (0 < or = x < or = 0.2) has been successfully prepared by a solution chemical route. High-resolution transmission electron microscopy studies show that the average grain size of Sn0.8In0.2O2 heated at 310 degrees C, 500 degrees C, and 800 degrees C for 12 h is about 3-4 nm, 5-6 nm, and 7-10 nm, respectively. The corresponding values for pure SnO2 are 3-4 nm, 7-10 nm, and 50-90 nm, respectively. Powder X-ray diffraction and electron diffraction studies confirm the existence of solid solution only in the nanocrystalline state (the average particle size is in the range of 5-10 nm) with the solubility limited to 20% of In2O3. Indium ions stabilize the nanocrystalline nature of Sn1-xInxO2 (0 < or = x < or = 0.2) and prevent the grain growth by entering the SnO2 lattice. The thermal characteristics of nanocrystalline Sn1-xInxO2 (0 < or = x < or = 0.2) investigated by thermogravimetric (TG) and differential thermal analysis (DTA) show that the solid solution decomposes at 820 degrees C into SnO2 and In2O3, which is accompanied by a rapid crystal growth. The electrical conductivity and activation energy of Sn1-xInxO2 (0 < or = x < or = 0.2) undergo significant changes when the average grain size is less than or equal to 2 x the Debye length, LD.